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BD535

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size116KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD535 Overview

POWER TRANSISTOR

BD535 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・High
breakdown voltage
APPLICATIONS
・For
use in line-operated equipment
such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2N5655 2N5656 2N5657
Absolute maximum ratings(Ta=25
℃)
SYMBOL
固电
导½
PARAMETER
CONDITIONS
2N5655
2N5656
V
CBO
Collector-base voltage
V
CEO
INC
Collector-emitter voltage
ANG
H
2N5657
2N5655
2N5656
MIC
E SE
Open emitter
Open base
Open collector
DUC
ON
VALUE
275
325
375
OR
T
UNIT
V
250
300
350
6
0.5
1.0
0.25
V
A
A
A
W
V
2N5657
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
20
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
6.25
UNIT
℃/W

BD535 Related Products

BD535 2N5655 2N5656 2N5657 BD537 BD533
Description POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
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