Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・High
breakdown voltage
APPLICATIONS
・For
use in line-operated equipment
such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2N5655 2N5656 2N5657
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
固电
导½
半
PARAMETER
CONDITIONS
2N5655
2N5656
V
CBO
Collector-base voltage
V
CEO
INC
Collector-emitter voltage
ANG
H
2N5657
2N5655
2N5656
MIC
E SE
Open emitter
Open base
Open collector
DUC
ON
VALUE
275
325
375
OR
T
UNIT
V
250
300
350
6
0.5
1.0
0.25
V
A
A
A
W
℃
℃
V
2N5657
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
20
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
6.25
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5655
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N5656
2N5657
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N5655
I
CEO
Collector cut-off current
2N5656
2N5657
2N5655
2N5656
2N5657
I
C
=100mA ;I
B
=10mA
I
C
=250mA ;I
B
=25mA
I
C
=500mA ;I
B
=100mA
I
C
=100mA ; V
CE
=10V
V
CE
=150V; I
B
=0
V
CE
=200V; I
B
=0
V
CE
=250V; I
B
=0
V
CB
=275V; I
E
=0
V
CB
=325V; I
E
=0
2N5655 2N5656 2N5657
CONDITIONS
MIN
250
TYP.
MAX
UNIT
I
C
=0.1A; I
B
=0;L=50mH
300
350
1.0
2.5
10
1.0
V
V
V
V
V
0.1
mA
I
CBO
电半
固
INC
导½
Collector cut-off current
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
f
T
C
OB
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
ANG
H
MIC
E SE
V
CB
=375V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=50mA ; V
CE
=10V
I
C
=100mA ; V
CE
=10V
I
C
=250mA ; V
CE
=10V
I
C
=500mA ; V
CE
=10V
OR
UCT
ND
O
10
0.1
1.0
10
25
30
15
5
10
25
250
μA
V
CE
= Rated V
CEO
; V
BE(off)
=1.5V
T
C
=100℃
mA
μA
I
C
=50mA ; V
CE
=10V;f=10MHz
f=100kHz ; V
CB
=10V;I
E
=0
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5655 2N5656 2N5657
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
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