BD936 datasheet, PDF - EEWORLD Datasheet

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BD936: Description3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126; Categorysemiconductor Discrete semiconductor; File Size82KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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BD936 Overview

3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126

BD936 Parametric

Parameter Name	Attribute value
Maximum collector current	3 A
Maximum Collector-Emitter Voltage	80 V
Number of terminals	3
each_compli	Yes
state	Active
structure	SINGLE
Minimum DC amplification factor	12
jedec_95_code	TO-126
jesd_30_code	R-PSFM-T3
jesd_609_code	e0
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Maximum operating temperature	150 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	PNP
wer_dissipation_max__abs_	1.5 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Rated crossover frequency	50 MHz

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Power Transistor

DESCRIPTION

·DC

Current Gain-

: h

FE

= 40(Min)@ I

C

= -150mA

·Complement

to Type BD933/935/937/939/941

APPLICATIONS

·Designed

for use in output stages of audio and television

amplifier circuits where high peak powers can occur.

ABSOLUTE MAXIMUM RATINGS(T

a

=25

℃)

SYMBOL

PARAMETER

BD934

BD936

V

CBO

Collector-Base Voltage

BD938

BD940

BD942

BD934

BD936

V

CEO

Collector-Emitter Voltage

BD938

BD940

BD942

V

EBO

I

C

I

CM

I

B

BD934/936/938/940/942

VALUE

-45

-60

-100

-120

-140

-45

-60

-80

-100

-120

-5

-3

-7

-0.5

30

150

-65~150

UNIT

V

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T

C

=25℃

Junction Temperature

Storage Temperature Range

V

A

W

℃

P

C

T

J

T

stg

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

R

th j-a

PARAMETER

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

MAX

4.17

70

UNIT

℃/W

isc Website：www.iscsemi.cn

BD936 Related Products

	BD936	BD934	BD938	BD940	MJE172	BD942
Description	3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126	3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126	3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126	3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126	3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126	3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
Maximum collector current	3 A	3 A	3 A	3 A	3 A	3 A
Maximum Collector-Emitter Voltage	80 V	80 V	80 V	80 V	80 V	80 V
Number of terminals	3	3	3	3	3	3
each_compli	Yes	Yes	Yes	Yes	Yes	Yes
state	Active	Active	Active	Active	Active	Active
structure	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	12	12	12	12	12	12
jedec_95_code	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126
jesd_30_code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
jesd_609_code	e0	e0	e0	e0	e0	e0
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Number of components	1	1	1	1	1	1
Maximum operating temperature	150 Cel	150 Cel	150 Cel	150 Cel	150 Cel	150 Cel
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
eak_reflow_temperature__cel_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
larity_channel_type	PNP	PNP	PNP	PNP	PNP	PNP
wer_dissipation_max__abs_	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors
surface mount	NO	NO	NO	NO	NO	NO
terminal coating	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Rated crossover frequency	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz	50 MHz

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