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BDV67C

Description
RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size118KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDV67C Overview

RF POWER TRANSISTOR

BDV67C Parametric

Parameter NameAttribute value
Maximum collector current16 A
stateActive
structureDARLINGTON
Minimum DC amplification factor1000
Maximum operating temperature150 Cel
larity_channel_typeNPN
wer_dissipation_max__abs_200 W
sub_categoryOther Transistors
surface mountNO
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type BDV66/66A/66B/66C/66D
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use in audio output stages and general
amplifier and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDV67/67A/67B/67C/67D
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
)
SYMBOL
固电
导½
PARAMETER
CONDITIONS
BDV67
BDV67A
V
CBO
Collector-base voltage
HA
INC
V
CEO
ES
NG
BDV67B
BDV67C
BDV67D
BDV67
BDV67A
BDV67B
BDV67C
BDV67D
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
80
100
120
140
160
60
80
UNIT
V
Collector-emitter voltage
Open base
100
120
150
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
5
16
20
0.5
V
A
A
A
W
T
C
=25℃
200
150
-65~150

BDV67C Related Products

BDV67C BDV67B BDV67 BDV67A BDV67D
Description RF POWER TRANSISTOR RF POWER TRANSISTOR RF POWER TRANSISTOR RF POWER TRANSISTOR RF POWER TRANSISTOR
Maximum collector current 16 A 16 A 16 A 16 A 16 A
state Active Active Active Active Active
structure DARLINGTON DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC amplification factor 1000 1000 1000 1000 1000
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel 150 Cel
larity_channel_type NPN NPN NPN NPN NPN
wer_dissipation_max__abs_ 200 W 200 W 200 W 200 W 200 W
sub_category Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors
surface mount NO NO NO NO NO
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