INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUJ403A
DESCRIPTION
·High
Voltage
·High
Speed Switching
APPLICATIONS
·Desined
for use in high frequency electronic lighting ballast
applications, converters, inverters, switching regulators,
motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1200
550
7
6
10
3
5
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(
sat
)
V
BE(
sat
)
I
CES
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= 10mA; I
B
= 0, L= 25mH
I
C
= 2A; I
B
= 0.4A
B
BUJ403A
MIN
550
TYP.
MAX
UNIT
V
1.0
1.5
1
2
0.1
0.1
13
20
13
15.5
47
25
V
V
mA
mA
mA
I
C
= 2A; I
B
= 0.4A
B
V
CE
=RatedV
CES
;V
BE
= 0
V
CE
=RatedV
CES
;V
BE
= 0;T
C
=125℃
V
CE
= 550V; I
B
= 0
V
EB
= 7V; I
C
= 0
I
C
= 1mA ; V
CE
= 5V
I
C
= 0.5A ; V
CE
= 5V
I
C
= 2A ; V
CE
= 5V
I
C
= 3A ; V
CE
= 5V
Switching Times ;Resistive Load
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= 2.5A; I
B1
= -I
B2
= 0.5A;
R
L
= 75Ω; V
BB2
= 4V
0.5
3.0
0.3
μs
μs
μs
isc Website：www.iscsemi.cn
京公网安备 11010802033920号
EEWORLD
