INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
DESCRIPTION
·Low
Saturation Voltage
·Fast
Switching Speed
·Complement
to Type D44VH Series
APPLICATIONS
·Designed
for high-speed switching applications, such as
switching regulators and high frequency inverters. They are
also well-suited for drivers for high power switching circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
D45VH 1
Collector-Emitter
Voltage
D45VH 4
D45VH 7
D45VH 10
D45VH 1
Collector-Emitter
Voltage
D45VH 4
D45VH 7
D45VH 10
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-50
-70
V
-80
-100
-30
-45
V
-60
-80
-5
-15
-20
83
150
-55~150
V
A
A
W
℃
℃
UNIT
D45VH Series
V
CEV
V
CEO
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.5
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
D45VH 1
D45VH 4
I
C
= -25mA ;I
B
= 0
B
D45VH Series
CONDITIONS
MIN
-30
-45
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
-60
-80
D45VH 7
D45VH 10
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CEV
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
I
C
= -8A ;I
B
= -0.8A
I
C
= -15A ;I
B
= -3A;T
C
=100℃
I
C
= -8A ;I
B
= -0.8A
I
C
= -8A ;I
B
= -0.8A;T
C
=100℃
V
CE
=RatedV
CE
;V
BE(
off
)
=-4V
V
CE
=RatedV
CE
;V
BE(
off
)
=-4V;T
C
=100℃
V
EB
= -7V; I
C
= 0
I
C
= -2A ; V
CE
= -1V
I
C
= -4A ; V
CE
= -1V
I
E
= 0;V
CB
= -10V,f
test
= 1.0MHz
I
C
= 0.1A;V
CE
= -10V;f
test
= 20MHz
35
20
275
50
-1.0
-1.5
-1.0
-1.5
-10
-100
-10
V
V
V
μA
μA
pF
MHz
Switching Times
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
50
250
700
90
ns
ns
ns
ns
I
C
= -8A; I
B1
= -I
B2
= -0.8A
V
CC
= -20V
isc Website：www.iscsemi.cn
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