GBU1010 datasheet, PDF - EEWORLD Datasheet

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GBU1010: Description3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size77KB，2 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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GBU1010 Overview

3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBU1010 Parametric

Parameter Name	Attribute value
Maker	HY Electronic
Reach Compliance Code	unknow
Diode type	BRIDGE RECTIFIER DIODE

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GBU10005 thru GBU1010

GLASS PASSIVATED

BRIDGE RECTIFIERS

FEATURES

●

Surge overload rating -220 amperes peak

●

Ideal for printed circuit board

●

Reliable low cost construction utilizing

REVERSE VOLTAGE

FORWARD CURRENT

GBU

.437(11.1)

.430(10.9)

.874(22.2)

.860(21.8)

- 50

1000Volts

- 10.0

Amperes

.126(3.2)*45°

CHAMFER

.139(3.53)

.133(3.37)

molded plastic technique

●

Plastic material has U/L

flammability classification 94V-0

●

Mounting postition:Any

.752(19.1)

.720(18.3)

.073(1.85)

.057(1.45)

.154(3.9)

.146(3.7)

.232(5.9)

.224(5.7)

.401(10.2)

.392(9.80)

.720(18.29)

.680(17.27)

.047(1.2)

.035(0.9)

.100(2.54)

.085(2.16)

.080(2.03)

.065(1.65)

.106(2.7)

.091(2.3)

Dimensions in inches and (milimeters)

.210

.190

(5.3)

(4.8)

.210

.190

(5.3)

(4.8)

.210

.190

(5.3)

(4.8)

.022(.56)

.018(.46)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note 2)

Rectified Current

@ T

=100℃ (without heatsink)

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

Maximum Forward Voltage at 5.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

t Rating for Fusing (t<8.3ms)

Typical Junction Capacitance Per Element (Note1)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

@ T

=25℃

@ T

=125℃

SYMBOL

RRM

RMS

(AV)

GBU

10005

GBU

1001

100

GBU

1002

200

140

200

GBU

1004

400

280

400

10.0

3.0

220

1.1

10.0

500

200

2.2

-55 to +150

GBU

1006

600

420

600

GBU

1008

800

560

800

GBU

1010

1000

700

1000

UNIT

FSM

θJC

STG

μA

℃/W

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.

~ 480 ~

GBU1010 Related Products

	GBU1010	GBU1001	GBU1002	GBU1008	GBU1006	GBU1004
Description	3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maker	HY Electronic	HY Electronic	-	HY Electronic	-	HY Electronic

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