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GBU1001

Description
3.6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size77KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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GBU1001 Overview

3.6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

GBU1001 Parametric

Parameter NameAttribute value
MakerHY Electronic
Reach Compliance Codeunknow
Diode typeBRIDGE RECTIFIER DIODE
GBU10005 thru GBU1010
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Surge overload rating -220 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
REVERSE VOLTAGE
FORWARD CURRENT
GBU
.437(11.1)
.430(10.9)
.874(22.2)
.860(21.8)
- 50
to
1000Volts
- 10.0
Amperes
.126(3.2)*45°
CHAMFER
.139(3.53)
.133(3.37)
molded plastic technique
Plastic material has U/L
flammability classification 94V-0
Mounting postition:Any
.752(19.1)
.720(18.3)
.073(1.85)
.057(1.45)
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
.401(10.2)
.392(9.80)
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.106(2.7)
.091(2.3)
Dimensions in inches and (milimeters)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.022(.56)
.018(.46)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=100℃ (without heatsink)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
GBU
10005
50
35
50
GBU
1001
100
70
100
GBU
1002
200
140
200
GBU
1004
400
280
400
10.0
3.0
220
1.1
10.0
500
200
70
2.2
-55 to +150
-55 to +150
GBU
1006
600
420
600
GBU
1008
800
560
800
GBU
1010
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
A
V
μA
A
2
s
pF
℃/W
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.
~ 480 ~

GBU1001 Related Products

GBU1001 GBU1010 GBU1002 GBU1008 GBU1006 GBU1004
Description 3.6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code unknow unknow unknow unknow unknow unknow
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maker HY Electronic HY Electronic - HY Electronic - HY Electronic
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