MBRF1040CT datasheet, PDF - EEWORLD Datasheet

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MBRF1040CT: Description10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB; CategoryDiscrete semiconductor diode; File Size87KB，2 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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MBRF1040CT Overview

10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

MBRF1040CT Parametric

Parameter Name	Attribute value
package instruction	R-PSFM-T3
Reach Compliance Code	unknow
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	120 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	40 V
Maximum reverse current	100 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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MBRF1030CT thru MBRF10100CT

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE

- 30

100Volts

FORWARD CURRENT

- 10.0

Amperes

ITO-220AB

.138(3.5)

.122(3.1)

.118(3.0)

.102(2.6)

.189(4.8)

.173(4.4)

.118(3.0)

.106(2.7)

FEATURES

●

Metal of silicon rectifier , majority carrier conduction

●

Guard ring for transient protection

●

Low power loss,high efficiency

●

High current capability,low VF

●

High surge capacity

●

Plastic package has UL flammability

.406(10.3)

.386(9.8)

classification 94V-0

●

For use in low voltage,high frequency inverters,free

.610(15.5)

.571(14.5)

.157(4.0)

.142(3.6)

wheeling,and polarity protection applications

MECHANICAL DATA

●

Case: ITO-220AB molded plastic

●

Polarity: As marked on the body

●Weight:

0.08ounces,2.24 grams

●

Mounting position :Any

.059(1.5)

.043(1.1)

.030(0.76)

.020(0.51)

.112(2.84)

.088(2.24)

.071(1.8)

.055(1.4)

.571(14.5)

.531(13.5)

.114(2.9)

.098(2.5)

.030(0.76)

.020(0.51)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current ( See Fig.1)

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

Peak Forward Voltage (Note1)

IF=5A @T

=25℃

IF=5A @T

=125℃

IF=10A @TJ=25℃

IF=10A @T

=125℃

Maximum DC Reverse Current

at Rated DC Bolcking Voltage

=25℃

=125℃

SYMBOL

RRM

RMS

(AV)

MBRF

1030CT

MBRF

1040CT

MBRF

1050CT

MBRF

1060CT

MBRF

1080CT

MBRF

10100CT

100

UNIT

10.0

FSM

0.70

0.57

0.80

0.70

θJC

STG

170

3.0

125

0.80

0.65

0.90

0.75

0.1

220

300

3.0

-55 to +150

-55 to +175

0.85

0.75

0.95

0.85

℃/W

℃

Typical Junction Capacitance (Note2)

Typical Thermal Resistance (Note3)

Operating Temperature Range

Storage Temperature Range

NOTES:1.300us pulse width,2% duty cycle.

2.Measured at 1.0 MH

and applied reverse voltage of 4.0V DC.

3.Thermal resistance junction to case.

~ 246 ~

MBRF1040CT Related Products

	MBRF1040CT	MBRF10100CT	TC4158	MBRF1050CT	MBRF1080CT	MBRF1060CT
Description	10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB	10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB	5W Mono Digital Audio Power Amplifier IC	5 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB	10 A, SILICON, RECTIFIER DIODE, TO-220AB	5 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
package instruction	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Reach Compliance Code	unknow	unknow	-	unknow	unknow	unknow
Other features	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	-	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY	EFFICIENCY	-	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V	0.95 V	-	0.9 V	0.95 V	0.9 V
JEDEC-95 code	TO-220AB	TO-220AB	-	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Maximum non-repetitive peak forward current	120 A	120 A	-	120 A	120 A	120 A
Number of components	2	2	-	2	2	2
Phase	1	1	-	1	1	1
Number of terminals	3	3	-	3	3	3
Maximum operating temperature	150 °C	150 °C	-	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C
Maximum output current	5 A	5 A	-	5 A	5 A	5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	40 V	100 V	-	50 V	80 V	60 V
Maximum reverse current	100 µA	100 µA	-	100 µA	100 µA	100 µA
surface mount	NO	NO	-	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	-	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Maker	-	HY Electronic	-	HY Electronic	HY Electronic	HY Electronic

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