MBRF1030CT thru MBRF10100CT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
100Volts
FORWARD CURRENT
- 10.0
Amperes
ITO-220AB
.138(3.5)
.122(3.1)
.118(3.0)
.102(2.6)
.189(4.8)
.173(4.4)
.118(3.0)
.106(2.7)
FEATURES
●
Metal of silicon rectifier , majority carrier conduction
●
Guard ring for transient protection
●
Low power loss,high efficiency
●
High current capability,low VF
●
High surge capacity
●
Plastic package has UL flammability
.406(10.3)
.386(9.8)
classification 94V-0
●
For use in low voltage,high frequency inverters,free
.610(15.5)
.571(14.5)
.157(4.0)
.142(3.6)
wheeling,and polarity protection applications
MECHANICAL DATA
●
Case: ITO-220AB molded plastic
●
Polarity: As marked on the body
●Weight:
0.08ounces,2.24 grams
●
Mounting position :Any
.059(1.5)
.043(1.1)
.030(0.76)
.020(0.51)
.112(2.84)
.088(2.24)
.071(1.8)
.055(1.4)
.571(14.5)
.531(13.5)
.114(2.9)
.098(2.5)
.030(0.76)
.020(0.51)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current ( See Fig.1)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Peak Forward Voltage (Note1)
IF=5A @T
J
=25℃
IF=5A @T
J
=125℃
IF=10A @TJ=25℃
IF=10A @T
J
=125℃
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@T
J
=25℃
@T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
MBRF
1030CT
30
21
30
MBRF
1040CT
40
28
40
MBRF
1050CT
50
35
50
MBRF
1060CT
60
42
60
MBRF
1080CT
80
56
80
MBRF
10100CT
100
70
100
UNIT
V
V
V
A
10.0
I
FSM
0.70
V
F
0.57
0.80
0.70
I
R
C
J
R
θJC
T
J
T
STG
170
3.0
125
0.80
0.65
0.90
0.75
0.1
15
220
300
3.0
-55 to +150
-55 to +175
0.85
0.75
0.95
0.85
A
V
mA
pF
℃/W
℃
℃
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MH
Z
and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
~ 246 ~
RATING AND CHARACTERTIC CURVES
MBRF1030CT thru MBRF10100CT
FIG. 2
–
MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
300
250
200
150
100
50
0
1
2
10
20
50
5
NUMBER OF CYCLES AT 60Hz
100
PULSE WIDTH 8.3 ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
FIG. 1
–
FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
10.0
8.0
6.0
4.0
2.0
0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
25
50
75
100
125
150
175
CASE TEMPERATURE (℃)
FIG.3-TYPICAL REVER CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT(mA)
MBRF1030CT - MBRF1060CT
MBRF1080CT - MBRF10100CT
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT,
(A)
100
MBRF1030CT -
MBRF1040CT
10
MBRF1050CT -
MBRF1060CT
10
T
J
=125
℃
1.0
T
J
=75
℃
1.0
MBRF1080CT -
MBRF10100CT
T
J
= 25°C
PULSE WIDTH 300us
2% DUTY CYCLE
0.1
T
J
=25
℃
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5
–
TYPICAL JUNCTION CAPACITANCE
10000
T
J
= 25°C f = 1 MHz
CAPACITANCE, (pF)
1000
MBRF1080CT - MBRF10100CT
MBRF1050CT - MBRF1060CT
MBRF1030CT - MBRF1040CT
100
0.1
1
4
10
REVERSE VOLTAGE ,VOLTS
100
~ 247 ~
FPGA/CPLD
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