2SB656 datasheet, PDF - EEWORLD Datasheet

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2SB656: DescriptionSilicon PNP Power Transistors; File Size118KB，3 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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2SB656 Overview

Silicon PNP Power Transistors

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB656

DESCRIPTION

・With

TO-3 package

・High

power dissipation

APPLICATIONS

・For

use in power amplifier applications

PINNING(see Fig.2)

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

DESCRIPTION

Absolute maximum ratings(Ta=

℃)

SYMBOL

CBO

CEO

EBO

stg

固电

导½

半

PARAMETER

Open base

CONDITIONS

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

ANG

MIC

E SE

Open emitter

Open collector

UCT

VALUE

-160

-5

-12

-4

UNIT

℃

Base current

Collector power dissipation

Junction temperature

Storage temperature

=25℃

125

150

-55~150

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