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S2DA

Description
1.5 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size87KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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S2DA Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE

S2DA Parametric

Parameter NameAttribute value
package instructionR-PDSO-C2
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
S2AA thru S2MA
SURFACE MOUNT
GLASS PASSIVATED RECTIFIERS
FEATURES
Glass passivated chip
For surface mounted applications
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic material has UL flammability
REVERSE VOLTAGE
- 50
to
1000Volts
FORWARD CURRENT
- 2.0
Amperes
SMA
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
classification 94V-0
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
MECHANICAL DATA
Case: Molded Plastic
Polarity:Color band denotes cathode
Weight: 0.002 ounces,0.053 grams
Mounting position: Any
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load (JEDEC Method)
Maximum Forward Voltage at 2.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@T
J
=125℃
@T
L
=100
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
S2AA
50
35
50
S2BA
100
70
100
S2DA
200
140
200
S2GA
400
280
400
2.0
S2JA
600
420
600
S2KA
800
560
800
S2MA
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJL
T
J
T
STG
70
1.1
5.0
125
20
20
-55 to +150
-55 to +150
A
V
μA
pF
℃/W
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance junction to lead.
~ 30 ~

S2DA Related Products

S2DA S2BA S2AA S2MA S2GA S2JA S2KA
Description 1.5 A, 200 V, SILICON, RECTIFIER DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE 1.5 A, 50 V, SILICON, RECTIFIER DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 600 V, SILICON, RECTIFIER DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE
package instruction R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 60 A 60 A 60 A 60 A 60 A 60 A 60 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 200 V 100 V 50 V 1000 V 400 V 600 V 800 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
surface mount YES YES YES YES YES YES YES
Terminal form C BEND C BEND C BEND C BEND C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maker - HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic
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