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BD317

Description
Silicon NPN Power Transistors
File Size112KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD317 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD317
DESCRIPTION
・With
TO-3 package
・High
DC current gain
・Excellent
safe operating area
・Complement
to type BD318
APPLICATIONS
・Designed
for high power amplifiers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
固电
导½
PARAMETER
CONDITIONS
Open emitter
Open base
Collector-base voltage
Collector-emitter voltage
HA
INC
Emitter-base voltage
Collector current
Base current
Junction temperature
Storage temperature
ES
NG
Open collector
MIC
E
DUC
ON
VALUE
100
OR
T
UNIT
V
V
V
A
A
A
W
100
7
16
20
5
Collector current(peak)
Total power dissipation
T
C
=25℃
200
-65~200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
0.875
UNIT
℃/W
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