Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2520DF
DESCRIPTION
・With
TO-3PFa package
・High
voltage,high speed
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection circuits
of large screen colour TV receivers
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
固电
导½
半
Collector-base voltage
HA
INC
Base current-peak
Collector-emitter voltage
Collector current (DC)
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
1500
800
10
25
6
9
UNIT
V
V
A
A
A
A
W
℃
℃
Collector current-peak
Base Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
45
150
-65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2520DF
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0,L=25mH
800
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=600mA ;I
C
=0
7.5
13.5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=6A ;I
B
=1.2A
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=6A ;I
B
=1.2A
V
CE
=BV
CES;
V
BE
=0
T
C
=125℃
V
EB
=7.5V; I
C
=0
100
1.1
1.0
2.0
300
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
h
FE-2
固电
DC current gain
导½
半
I
C
=1.0A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
V
F
Diode forward voltage
C
C
Collector capacitance
HA
INC
ES
NG
I
F
=6A
MIC
E
OR
UCT
ND
O
5
7
9.5
2.2
115
13
V
f=1MHz;V
CB
=10V
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2520DF
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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