Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW36
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
APPLICATIONS
・For
high voltage ,fast switching
applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
固电
Collector-base voltage
导½
半
PARAMETER
CONDITIONS
Collector-emitter voltage
Emitter-base voltage
Collector current
INC
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
900
450
7
10
15
5
UNIT
V
V
V
A
A
A
W
℃
℃
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
≤25℃
125
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.4
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=100mA ; I
B
=0
I
C
=8A; I
B
=2.5A
I
C
=8A; I
B
=2.5A
V
CE
=900V ;V
BE
=0
T
C
=125℃
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
15
8
MIN
450
TYP.
BUW36
MAX
UNIT
V
3.0
1.8
0.1
3.0
1
50
V
V
mA
mA
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
ANG
CH
IN
MIC
E SE
I
C
=5A ;I
B1
=- I
B2
=1A
V
CC
=250V
OR
CT
NDU
O
0.7
3.0
0.8
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUW36
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
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