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2SA1718

Description
Silicon PNP Power Transistors
File Size90KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SA1718 Overview

Silicon PNP Power Transistors

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1718
DESCRIPTION
·With
TO-220F package
·High
DC current gain.
·Low
collector saturation voltage.
·DARLINGTON
APPLICATIONS
·Ideal
for motor drviers and solenoid
drivers application
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-7
-5
-10
-0.5
20
UNIT
V
V
V
A
A
A
P
C
Collector dissipation
T
a
=25℃
2.0
150
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature
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