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2SA1726

Description
Silicon PNP Power Transistor
File Size87KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SA1726 Overview

Silicon PNP Power Transistor

INCHANGE Semiconductor
Product Specification
Silicon PNP Power Transistor
2SA1726
DESCRIPTION
·Low
Collector Saturation Voltage
:V
CE(
sat
)
= -0.5(V)(Max)@I
C
= -2A
·High
Switching Speed
·Complement
to Type 2SC4512
APPLICATIONS
·Designed
for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-80
V
V
CEO
Collector-Emitter Voltage
-80
V
V
EBO
Emitter-Base Voltage
-6
V
I
C
Collector Current-Continuous
-6
A
I
B
B
Base Collector Current-Continuous
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
-3
A
P
C
50
W
T
J
150
T
stg
Storage Temperature Range
-55~150
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