2SA885 datasheet, PDF - EEWORLD Datasheet

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2SA885: DescriptionPower Device - Power Transistors - Others; File Size156KB，5 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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2SA885 Overview

Power Device - Power Transistors - Others

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

DESCRIPTION

·With

TO-126 package

·Complement

to type 2SC1846

·Low

collector-emitter saturation voltage

APPLICATIONS

·For

low-frequency power amplification

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

2SA885

Absolute Maximun Ratings (Ta=25

℃)

SYMBOL

CBO

CEO

EBO

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-peak

CONDITIONS

Open emitter

Open base

Open collector

VALUE

-45

-35

-5

-1

-1.5

1.2*

Collector power dissipation

=25℃

stg

Junction temperature

Storage temperature

UNIT

150

-55~150

℃

Note) *1: Without heat sink

*2: With a 100

100

2 mm A1 heat sink

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