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BDY91

Description
isc Silicon NPN Power Transistor
File Size51KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDY91 Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDY91
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 30-120@I
C
= 5A
·Excellent
Safe Operating Area
·High
Current Capability
APPLICATIONS
·Designed
for use in switching-control amplifiers, power
gates,switching regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage V
BE
= -1.5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@T
C
≤25℃
Junction Temperature
Storage Temperature Range
VALUE
100
100
80
6
10
15
2
60
175
-65~175
UNIT
V
V
V
V
A
A
A
W
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
isc Website:www.iscsemi.cn

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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