INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT11
DESCRIPTION
·High
Voltage
·High
Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching
regulators
·Motor
control systems
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
850
400
7
5
10
2
100
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BUT11
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0, L= 25mH
400
V
V
CE(
sat
)
V
BE(
sat
)
I
CES
I
EBO
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.6A
B
1.5
V
Base-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.6A
B
1.3
1
2
10
V
Collector Cutoff Current
V
CE
=RatedV
CES
;V
BE
= 0
V
CE
=RatedV
CES
;V
BE
= 0;T
C
=125℃
V
EB
= 9V; I
C
= 0
mA
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
= 5mA ; V
CE
= 5V
10
35
h
FE-2
DC Current Gain
I
C
= 0.5A ; V
CE
= 5V
10
35
Switching Times ;Resistive Load
μs
μs
μs
t
on
t
s
t
f
Turn-on Time
1.0
Storage Time
I
C
= 3A;I
B1
= -I
B2
= 0.6A
4.0
Fall Time
0.8
isc Website：www.iscsemi.cn
Embedded System
京公网安备 11010802033920号
EEWORLD
