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2SC2613

Description
Silicon NPN Power Transistors
File Size143KB,4 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SC2613 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2613
DESCRIPTION
・With
TO-220 package
・High
collector breakdown voltage
: V
CEO
=400V(Min)
APPLICATIONS
For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
固电
导½
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
500
400
7
5
10
2.5
UNIT
V
V
V
A
A
A
W
T
C
=25℃
40
150
-55~150
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