FBI3.7M1M1-4 datasheet, PDF - EEWORLD Datasheet

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FBI3.7M1M1-4: DescriptionBridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor diode; File Size35KB，2 Pages; ManufacturerFagor Electrónica; Environmental Compliance

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FBI3.7M1M1-4 Overview

Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4

FBI3.7M1M1-4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PSFM-T4
Contacts	4
Reach Compliance Code	unknown
Other features	UL RECOGNIZED
Minimum breakdown voltage	500 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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FBI3.7B1M1.......FBI3.7M1M1

3.7 Amp. Glass Passivated Bridge Rectifier

Dimensions in mm.

25

3.2

Plastic

Case

3.5

Voltage

100 to 1000 V.

Current

3.7 A.

®

_

1

+ 0.05

+

• Glass Passivated Junction Chips.

L

7.5

10

suffix

–4

1

0.7

•

UL recognized under component index file

number E320541.

•

Lead and polarity identifications.

•

Case: Molded Plastic.

•

Ideal for printed circuit board (P.C.B.).

•

High surge current capability.

•

The plastic material carries U/L recognition 94 V-O.

17.5

8

• Mounting Instructions

•

High temperature soldering guaranteed: 260 ºC – 10 sc.

•

Recommended mounting torque: 8 Kg.cm.

Maximum Ratings, according to IEC publication No. 134

FBI3.7B

1M1

FBI3.7D

1M1

200

140

80

FBI3.7F

1M1

300

210

125

FBI3.7J

1M1

600

420

250

FBI3.7L FBI3.7M

1M1

900

630

380

1000

700

500

V

RRM

V

RMS

V

R

I

F(AV)

I

FRM

I

FSM

I

2

t

V

DIS

T

j

T

stg

Peak Recurrent Reverse Voltage (V)

Maximum RMS Voltage (V)

Recommended Input Voltage (V)

Max. Average forward current with heatsink

without heatsink

Recurrent peak forward current

10 ms. peak forward surge current

I

2

t value for fusing (t = 10 ms)

Dielectric strength

(terminals to case, AC 1 min.)

Operating temperature range

Storage temperature range

100

70

40

3.7 A at 100 ºC

3.0 A at 25 ºC

20 A

150 A

110 A

2

sec

1500 V

– 40 to + 150 °C

– 40 to +150 ºC

Electrical Characteristics at Tamb = 25°C

V

F

I

R

th (j-c)

R

th (j-a)

Max. forward voltage drop per element at I

F

= 3 A

Max. reverse current per element at V

RRM

MAXIMUM THERMAL RESISTANCE

Junction-Case. With Heatsink.

Junction-Ambient. Without Heatsink.

1.1 V

5 A

5 ºC/W

22 ºC/W

Dec - 08

FBI3.7M1M1-4 Related Products

	FBI3.7M1M1-4	FBI3.7F1M1-4	FBI3.7J1M1-4	FBI3.7L1M1-4	FBI3.7B1M1-4	FBI3.7D1M1-4
Description	Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 300V V(RRM), Silicon, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 900V V(RRM), Silicon, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 100V V(RRM), Silicon, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, PLASTIC PACKAGE-4
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	PLASTIC PACKAGE-4	PLASTIC PACKAGE-4
Contacts	4	4	4	4	4	4
Reach Compliance Code	unknown	unknown	unknown	unknown	compliant	unknown
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	500 V	125 V	250 V	380 V	40 V	80 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
JESD-609 code	e3	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1000 V	300 V	600 V	900 V	100 V	200 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN	TIN	TIN	TIN	Tin (Sn)	TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	-

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