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FBI4M7M1-4

Description
Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size27KB,2 Pages
ManufacturerFagor Electrónica
Environmental Compliance
Download Datasheet Parametric Compare View All

FBI4M7M1-4 Overview

Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4

FBI4M7M1-4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSFM-T4
Contacts4
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
FBI4A7M1.......FBI4M7M1
4 Amp. Glass Passivated Bridge Rectifier
Dimensions in mm.
25
3.2
Plastic
Case
3.5
Voltage
50 to 1000 V.
Current
4.0 A.
®
_
1
+ 0.05
+
• Glass Passivated Junction Chips.
L
7.5
7.5
7.5
suffix
–4
1
0.7
UL recognized under component index file
number E130180.
Lead and polarity identifications.
Case: Molded Plastic.
Ideal for printed circuit board (P
.C.B.).
High surge current capability.
The plastic material carries U/L recognition 94 V-O.
17.5
8
• Mounting Instructions
High temperature soldering guaranteed: 260 ºC – 10 sc.
Recommended mounting torque: 8 Kg.cm.
Maximum Ratings, according to IEC publication No. 134
FBI4A FBI4B
7M1
7M1
FBI4D
7M1
200
140
FBI4G
7M1
400
280
FBI4J
7M1
600
420
FBI4K FBI4M
7M1
7M1
800
560
1000
700
V
RRM
V
RMS
I
F(AV)
I
FSM
I
2
t
V
DIS
T
j
T
stg
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Max. average Forward current with heatsink
without heatsink
10 ms. peak forward surge current
(Jedec Method)
Current squared time (rating for fusing)
(1ms.<t<10ms. Tc = 25ºC)
Dielectric strength (terminals to case, AC 1 min.)
Operating temperature range
Storage temperature range
50
35
100
70
4.0 A at 100 ºC
3.0 A at 40 ºC
150 A
2
110 A sec
2000 V
– 55 to + 150 °C
– 55 to +150 ºC
Electrical Characteristics at Tamb = 25°C
V
F
I
R
R
th (j-c)
R
th (j-a)
Max. forward voltage drop per diode at I
F
= 2.0 A
Max. reverse current at V
RRM
MAXIMUM THERMAL RESISTANCE
Junction-Case. With Heatsink.
Junction-Ambient. Without Heatsink.
0.95 V
5 A
5 ºC/W
22 ºC/W
Jan - 00

FBI4M7M1-4 Related Products

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Description Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 3A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon, PLASTIC PACKAGE-4
Is it Rohs certified? conform to conform to conform to conform to
package instruction R-PSFM-T4 R-PSFM-T4 PLASTIC PACKAGE-4 PLASTIC PACKAGE-4
Contacts 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609 code e3 e3 e3 e3
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 50 V 600 V 400 V
surface mount NO NO NO NO
Terminal surface TIN TIN TIN TIN
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 -
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