NEZ-3642-8DL datasheet, PDF - EEWORLD Datasheet

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NEZ-3642-8DL: DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size37KB，5 Pages; ManufacturerCalifornia Eastern Labs; Websitehttp://www.cel.com/

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NEZ-3642-8DL Overview

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN

NEZ-3642-8DL Parametric

Parameter Name	Attribute value
package instruction	HERMETIC SEALED, T-61, 2 PIN
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	10 V
Maximum drain current (ID)	3 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	C BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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C-BAND INTERNALLY

MATCHED POWER GaAs MESFET

FEATURES

•

HIGH P

OUT

18 W (42.5 dBm) Typ P

1dB

for NEZ3642-15D

9 W (39.5 dBm) Typ P

1dB

for NEZ3642-8D

4.5 W (36.5 dbm) Typ P

1dB

for NEZ3642-4D

HIGH EFFICIENCY

43%

ηadd

for 4.5W Device

40%

ηadd

for 9W Device

37%

ηadd

for 18W Device

LOW IMD

-45 dBc IM

@ 31.5 dBm Pout (S.C.L.) -15DL

-45 dBc IM

@ 29 dBm Pout (S.C.L.) -8DL

-45 dBc IM

@ 26 dBm Pout (S.C.L.) -4DL

CLASS A OPERATION

INTERNALLY MATCHED (IN/OUT)

INDUSTRY COMPATIBLE HERMETIC

PACKAGES

= 25°C)

NEZ3642-4D

NEZ3642-4DL

T-61

UNITS

dBm

MIN

35.5

NEZ3642-8D

NEZ3642-8DL

T-61

TYP MAX

-15D

NEZ3642-15D

NEZ3642-15DL

NEZ3642-8D

NEZ3642-8DL

NEZ3642-4D

NEZ3642-4DL

OUTPUT POWER AND EFFICIENCY

vs. INPUT POWER

100%

-8D

-4D

80%

OUT

•

Efficiency

60%

•

40%

20%

•

Input Power, P

(dBm)

ELECTRICAL CHARACTERISTICS

PART NUMBER

PACKAGE OUTLINE

SYMBOLS

1DB

CHARACTERISTICS

Output Power at P

IdB1

= 0.8A, RF Off

= 1.6A,RF Off

= 4.0A, RF Off

Power Added Efficiency @ P

1dB

Drain Current at P

1dB

Linear Gain

3rd Order Intermodulation

Distortion at

Pout = 26 dBm SCL

Pout = 29 dBm SCL

Pout = 31.5 dBm SCL

Saturated Drain Current

= 0 V

Pinch Off Voltage

= 15mA

= 30mA

= 60mA

Drain-Gate Breakdown Voltage

= 15 mA

= 30 mA

= 60 mA

Transconductance

= IA

= 2A

= 4A

Thermal Resistance

Channel to Case

Channel Temperature Rise

NEZ3642-15D

NEZ3642-15DL

T-65

MIN

TYP MAX

TEST CONDITIONS

= 10V

f= 3.6

to 4.2 GHz

Zs = Z

L =

50 ohms

DSQ

= 0.5 X I

DSS

= I0V

= 4.19 GHz

= 4.20 GHZ

2 Equal Tones

TYP MAX MIN

36.5

38.5

1.1

39.5

2.2

41.5 42.5

4.4

9.0

10.0

ADD

-X DL

Option

Only

DSS

1.5

10.0

3.0

6.0

10.0

11.5

11.0

dBc

°C/W

°C

1.0

-3.5

-45

-42

-45

-42

-45

-42

14.0

2.3

-2.0

3.5

-0.5

2.0

4.5

7.0

4.0

9.2

= 2.5 V

-4.0

-2.0

-0.5

-3.5

-2.2

-0.5

DGO

1300

2600

5200

5.0

6.0

2.5

3.0

1.3

1.5

TH(CH-C)

∆T

(CH-C)

Notes:

1. P

1dB

: Ouptut Power at the 1dB Gain Compression Point

2. S.C.L.: Single Carrier Level

3. Maximum Spec applies to -XDL only.

∆T

(CH-C)

= T

- T

= 10 V x I

DSQ

x R

TH (CH - C) MAX

California Eastern Laboratories

Power Added Efficiency,

ADD

(%)

Output Power, P

OUT

(dBm)

NEZ-3642-8DL Related Products

	NEZ-3642-8DL	NEZ-3642-8D	NEZ-3642-15D	NEZ-3642-15DL	NEZ-3642-4DL	NEZ-3642-4D
Description	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN
package instruction	HERMETIC SEALED, T-61, 2 PIN	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	HERMETIC SEALED, T-65, 2 PIN	HERMETIC SEALED, T-61, 2 PIN	FLANGE MOUNT, R-CDFM-F2
Contacts	2	2	2	2	2	2
Reach Compliance Code	compliant	unknown	unknown	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	10 V	10 V	10 V	10 V	10 V	10 V
Maximum drain current (ID)	3 A	3 A	6 A	6 A	1.5 A	1.5 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND
JESD-30 code	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Maker	-	-	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs

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