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Datasheet> All Categories > Discrete semiconductor> The transistor> NEZ-3642-4D
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NEZ-3642-4D

Description
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size37KB，5 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
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NEZ-3642-4D Overview

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN

NEZ-3642-4D Parametric

Parameter NameAttribute value
MakerCalifornia Eastern Labs
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage10 V
Maximum drain current (ID)1.5 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandC BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE

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C-BAND INTERNALLY
MATCHED POWER GaAs MESFET
FEATURES
•
HIGH P
OUT
18 W (42.5 dBm) Typ P
1dB
for NEZ3642-15D
9 W (39.5 dBm) Typ P
1dB
for NEZ3642-8D
4.5 W (36.5 dbm) Typ P
1dB
for NEZ3642-4D
HIGH EFFICIENCY
43%
ηadd
for 4.5W Device
40%
ηadd
for 9W Device
37%
ηadd
for 18W Device
LOW IMD
-45 dBc IM
3
@ 31.5 dBm Pout (S.C.L.) -15DL
-45 dBc IM
3
@ 29 dBm Pout (S.C.L.) -8DL
-45 dBc IM
3
@ 26 dBm Pout (S.C.L.) -4DL
CLASS A OPERATION
INTERNALLY MATCHED (IN/OUT)
INDUSTRY COMPATIBLE HERMETIC
PACKAGES
= 25°C)
NEZ3642-4D
NEZ3642-4DL
T-61
UNITS
dBm
dBm
dBm
%
A
dB
MIN
35.5
NEZ3642-8D
NEZ3642-8DL
T-61
TYP MAX
45
-15D
NEZ3642-15D
NEZ3642-15DL
NEZ3642-8D
NEZ3642-8DL
NEZ3642-4D
NEZ3642-4DL
OUTPUT POWER AND EFFICIENCY
vs. INPUT POWER
100%
40
-8D
-4D
80%
P
OUT
•
35
Efficiency
30
60%
•
40%
25
20%
•
•
•
20
12
17
22
27
32
37
0%
Input Power, P
IN
(dBm)
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
P
1DB
CHARACTERISTICS
Output Power at P
IdB1
I
D
= 0.8A, RF Off
I
D
= 1.6A,RF Off
I
D
= 4.0A, RF Off
Power Added Efficiency @ P
1dB
Drain Current at P
1dB
Linear Gain
3rd Order Intermodulation
Distortion at
3
Pout = 26 dBm SCL
2
Pout = 29 dBm SCL
2
Pout = 31.5 dBm SCL
2
Saturated Drain Current
V
GS
= 0 V
Pinch Off Voltage
I
DS
= 15mA
I
DS
= 30mA
I
DS
= 60mA
Drain-Gate Breakdown Voltage
I
DG
= 15 mA
I
DG
= 30 mA
I
DG
= 60 mA
Transconductance
I
DS
= IA
I
DS
= 2A
I
DS
= 4A
Thermal Resistance
Channel to Case
Channel Temperature Rise
4
NEZ3642-15D
NEZ3642-15DL
T-65
MIN
TYP MAX
TEST CONDITIONS
V
DS
= 10V
f= 3.6
to 4.2 GHz
Zs = Z
L =
50 ohms
I
DSQ
= 0.5 X I
DSS
V
DS
= I0V
f
1
= 4.19 GHz
f
2
= 4.20 GHZ
2 Equal Tones
TYP MAX MIN
36.5
38.5
43
1.1
39.5
40
2.2
41.5 42.5
37
4.4
9.0
10.0
η
ADD
I
DS
G
L
IM
3
-X DL
Option
Only
I
DSS
V
P
1.5
10.0
3.0
6.0
10.0
11.5
11.0
dBc
dBc
dBc
A
V
V
V
V
V
V
mS
mS
mS
°C/W
°C
1.0
-3.5
-45
-42
-45
-42
-45
-42
14.0
2.3
-2.0
3.5
-0.5
2.0
4.5
7.0
4.0
9.2
V
DS
= 2.5 V
-4.0
-2.0
-0.5
-3.5
-2.2
-0.5
BV
DGO
20
22
20
22
20
1300
2600
5200
5.0
6.0
48
2.5
3.0
48
1.3
1.5
60
22
g
m
R
TH(CH-C)
∆T
(CH-C)
Notes:
1. P
1dB
: Ouptut Power at the 1dB Gain Compression Point
2. S.C.L.: Single Carrier Level
3. Maximum Spec applies to -XDL only.
4.
∆T
(CH-C)
= T
CH
- T
C
= 10 V x I
DSQ
x R
TH (CH - C) MAX
.
California Eastern Laboratories
Power Added Efficiency,
η
ADD
(%)
Output Power, P
OUT
(dBm)

NEZ-3642-4D Related Products

NEZ-3642-4D NEZ-3642-8D NEZ-3642-8DL NEZ-3642-15D NEZ-3642-15DL NEZ-3642-4DL
Description RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-65, 2 PIN RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN
package instruction FLANGE MOUNT, R-CDFM-F2 FLANGE MOUNT, R-CDFM-F2 HERMETIC SEALED, T-61, 2 PIN FLANGE MOUNT, R-CDFM-F2 HERMETIC SEALED, T-65, 2 PIN HERMETIC SEALED, T-61, 2 PIN
Contacts 2 2 2 2 2 2
Reach Compliance Code unknown unknown compliant unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection SOURCE SOURCE SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 10 V 10 V 10 V 10 V 10 V 10 V
Maximum drain current (ID) 1.5 A 3 A 3 A 6 A 6 A 1.5 A
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
highest frequency band C BAND C BAND C BAND C BAND C BAND C BAND
JESD-30 code R-CDFM-F2 R-CDFM-F2 R-CDFM-F2 R-CDFM-F2 R-CDFM-F2 R-CDFM-F2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Maker California Eastern Labs - - California Eastern Labs California Eastern Labs California Eastern Labs

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