PHASE CONTROL THYRISTOR H250TBXX
T
J
( C)
0
Symbol
Characteristics
Conditions
Value
Unit
BLOCKING PARAMETERS
V
RRM
V
DRM
I
RRM
I
DRM
Repetitive
Repetitive
voltage
Repetitive
Repetitive
peak reverse voltage
peak off-stage
peak reverse current
peak off-state current
V = V
RRM
V = V
RRM
125
125
125
125
200-1800
200-1800
50
50
V
V
mA
mA
CONDUCTING PARAMETERS
I
F(AV)
I
RMS
I
TSM
It
2
Average on-state current
RMS on-state current
Surge on-state current
It
2
180 sine, 50H
Z
,
T
C
= 78
0
C
Sine wave,
10mS without
reverse voltage
On-state
current = 785A
250
392
125
125
125
125
4.60
106
1.75
0.92
0.99
A
A
kA
kA
2
S
V
V
mΩ
V
T
V
0
R
0
Peak on-state voltage drop
Threshold voltage
On-state slope resistance
TRIGGERING PARAMETERS
I
GT
V
GT
I
L
P
G –PEAK
di/dt
V
FGM
I
FGM
Gate trigger current
Gate trigger voltage
Latching Current
Maximum Peak Gate Power
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
V
D
= 5V
V
D
= 5V
Pulse width
100μSec
25
25
25
200
2.00
600
120
150
12
25
mA
V
mA
W
A/μSec
V
A
THERMAL & MECHANICAL PARAMETERS
R
TH (J-C)
R
TH (C-HK)
T
J
T
STG
F
W
Thermal impedance, 180
conduction, Sine
Thermal impedance
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
Junction to case
Case to
heatsink
0.12
0.04
125
-40 - 125
26
320
0
C/W
C/W
0
0
0
C
C
NM
gms
HIND RECTIFIERS LTD
1 of 6
PHASE CONTROL THYRISTOR H250TBXX
Max non repetitive Surge Current
5000
4500
4000
3500
I
tsm
(A)
3000
2500
2000
1500
1000
500
0
0.01
0.1
Tim e in Sec
1
10
Transient Thermal Impedance Junction to Case
0.15
0.125
0.1
R
th(j-c)
0.075
0.05
0.025
0
0.001
0.01
0.1
Tim e in Sec
1
10
HIND RECTIFIERS LTD
4 of 6
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