DIM1200FSM17 datasheet, PDF - EEWORLD Datasheet

DIM1200FSM17: DescriptionInsulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size238KB，3 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/; Environmental Compliance

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DIM1200FSM17 Overview

Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	1200 A
Collector-emitter maximum voltage	1700 V
Configuration	COMPLEX
JESD-30 code	R-XUFM-X7
Number of components	2
Number of terminals	7
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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