DB-915-12W
12W / 12V / 875-915 MHz PA using 1x PD55015S
The
LdmosST
FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
•
EXCELLENT THERMAL STABILITY
•
COMMON SOURCE CONFIGURATION
•
P
OUT
= 12 W min. with 12 dB gain over
875 - 915 MHz
•
10:1 LOAD VSWR CAPABILITY
•
BeO FREE AMPLIFIER.
DESCRIPTION
The DB-915-12W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier
designed
as
booster
for
GSM-R applications.
The DB-915-12W is designed in cooperation with
Européenne
de
Télécommunications
S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 12 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmonics lower than
30 dBc.
ORDER CODE
DB-915-12W
MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
DD
I
D
P
DISS
T
CASE
T
amb
Supply voltage
Drain Current
Power Dissipation
at T
CASE
= +85
°
C
Operating Case Temperature
Max. Ambient Temperature
Parameter
Value
18
4.5
67
-20 to +85
+55
Unit
V
A
W
o
C
o
C
November, 20 2002
1/5
DB-915-12W
ELECTRICAL SPECIFICATION (T
amb
= +25
o
C, Vdd = 26 V, Idq = 150 mA)
Symbol
FREQ.
Gain
P
1dB
Flatness
Flatness
ND at P
1dB
IRTL
Harmonic
VSWR
Spurious
IMD
3
Frequency Range
P
OUT
= 12 W
Over frequency range: 875 - 915 MHz
Over frequency range and @ P
OUT
= 12 W
P
OUT
from 0.1 W to 60 W
P
1dB
Input return Loss P
OUT
from 0.1 W to 12W
P
OUT
= 12 W
Load Mismatch all phases @ P
OUT
= 12 W
10:1 VSWR all phases and P
OUT
from 0.1 to 12 W
P
OUT
= 12 WPEP
10:1
-76
-25
dBc
dBc
45
50
-6
-30
Test Conditions
Min.
875
11
12
12
+/- 0.5
1
Typ.
Max.
915
Unit
MHz
dB
W
dB
dB
%
dB
dBc
2/5
DB-915-12W
TYPICAL PERFORMANCE
Power Gain vs. Frequency
16
Output Power vs. Frequency
24
22
20
15
14
Pin = 25 dBm
18
16
Pout (W)
14
12
10
P in = 31 dB m
13
Gp (dB)
12
Pin = 28 dBm
11
P in = 31 dB m
10
Vcc = 12.5 V
Idq = 150 m A
P in = 28 dB m
8
6
P in = 25 dB m
4
Vc c = 12.5 V
Idq = 150 m A
865
875
885
895
f (MHz )
905
915
925
9
8
865
875
885
895
f (MHz)
905
915
925
2
Drain Current vs. Frequency
4.0
Input Return Loss vs. Frequency
0
3.5
-2
3.0
P in = 31 dB m
2.5
-4
-6
RL (dB)
P in = 31 dB m
Id (A)
2.0
P in = 28 dB m
-8
P in = 25 dB m
1.5
P in = 25 dB m
1.0
-10
-12
P in = 28 dB m
0.5
Vc c = 12.5 V
Idq = 150 m A
865
875
885
895
f (MHz)
905
915
925
-14
Vc c = 12.5 V
Idq = 150 m A
865
875
885
895
f (MHz)
905
915
925
0.0
-16
Output Power vs. Frequency
18
16
14
Vdd = 15.6 V
12
Pout (W)
Vdd = 12.5 V
10
Vdd = 10.8 V
8
6
4
P in = 28 dB m
Idq = 150 m A
2
865
875
885
895
f (MHz )
905
915
925
3/5
DB-915-12W
TEST FIXTURE COMPONENT LAYOUT
TEST CIRCUIT PHOTOMASTER
TEST CIRCUIT COMPONENT PART LIST
Ref.
1
CV1, C V2
C4
C 10
C 12
C5, C 7,C9 C13
C 6, C 8
C3
C2
C1
R1
R2
P1
D1
T1
BOAR D
V alu e
RF Pow er Am plifier Circuit
Trim cap acitor HQ 0.6 -4 .5pF 500 V
C hip Capa cito r H Q 060 3 100p F TA 5% 5 0V
Chip Cap acitor HQ 5 .6pF TB +/- 0,25pF 5 00V
Chip Cap acitor HQ 4 .7pF TB +/- 0,25pF 5 00V
Chip Capa citor HQ 10 pF TB 5% 500V
Chip Capa citor HQ 47 pF TB 5% 500V
Chip Capa cito r HQ 100 pF TB 5 % 500V
Capa cito r 1206 10 0nF 63V X7R 1 0%
Capa citor CM S tantale 1µ F 20% 35 V
Resisto r C M S 4 ,7K 1206 1 /4W 5%
Resistor CM S 10K 1206 1/4W 5%
Trim resistor CM S ce rm et 3224W 10 K
Zener Diode 5 .1V 500m W SOD 80
RF LDM OS Transistor 12V 15W
TEFLON-GLASS Er = 2.55 , THK = 0.762 mm , C OPPER
FLANGE 2 m m THIC KN ESS
Ref. Manu facturer
PC IR50 1003
AT27273
50 0-C HA-101-JVLE
501 -C HB-3R3-C VLE
501 -C HB-8R2-C VLE
50 1-C HB-100-JVLE
50 1-C HB-470-JVLE
50 1-C HB-101-JVLE
VJ1 206Y104KXAT/63 0
293 D105X903 5B
27597
27605
3224 W-103
BZV55C 5V1
PD5 5015S
M X3 -3 0-C1/10 C
M anufacturer
ETSA
TECK
TEKELEC
TEKELEC
TEKELEC
TEKELEC
TEKELEC
TEKELEC
VISH AY
Vishay-Spragu e
BOUR NS
BOUR NS
BOUR NS
OM N ITEC H
STM icro électronics
M ETCLAD
4/5
DB-915-12W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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®
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