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TMS28F020-12C4FMQ

Description
Flash, 256KX8, 120ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32
Categorystorage    storage   
File Size312KB,21 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Download Datasheet Parametric View All

TMS28F020-12C4FMQ Overview

Flash, 256KX8, 120ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32

TMS28F020-12C4FMQ Parametric

Parameter NameAttribute value
package instruction1.25 MM PITCH, PLASTIC, LCC-32
Reach Compliance Codeunknown
Maximum access time120 ns
JESD-30 codeR-PQCC-J32
length13.97 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Programming voltage12 V
Maximum seat height3.56 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
typeNOR TYPE
width11.43 mm
Base Number Matches1
SMJS020C − OCTOBER 1994 − REVISED JANUARY 1998
TMS28F020
262144
BY 8
BIT
FLASH MEMORY
D
D
D
D
D
D
D
D
EPROMs
V
CC
Tolerance
±10%
All Inputs/Outputs TTL Compatible
Maximum Access/Minimum Cycle Time
’28F020-10
100 ns
’28F020-12
120 ns
’28F020-15
150 ns
’28F020-17
170 ns
Industry-Standard Programming Algorithm
100 000 and 10 000 Program / Erase-Cycle
Versions Available
Latchup Immunity of 250 mA on All Input
and Output Lines
Low Power Dissipation (V
CC
= 5.5 V)
− Active Write . . . 55 mW
− Active Read . . . 165 mW
− Electrical Erase . . . 82.5 mW
− Standby . . . 0.55 mW
(CMOS-Input Levels)
Automotive Temperature Range
− 40°C to 125°C
A12
A15
A16
VPP
VCC
W
A17
4
3 2 1 32 31 30
29
28
27
26
25
24
23
22
21
14 15 16 17 18 19 20
D
Organization . . . 262 144 by 8-Bits
D
Pin Compatible With Existing 2-Megabit
FM PACKAGE
( TOP VIEW )
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
5
6
7
8
9
10
11
12
13
A14
A13
A8
A9
A11
G
A10
E
DQ7
PIN NOMENCLATURE
A0 −A17
DQ0 −DQ7
E
G
VCC
VPP
VSS
W
Address Inputs
Inputs (programming) / Outputs
Chip Enable
Output Enable
5-V Power Supply
12-V Power Supply
Ground
Write Enable
description
The TMS28F020 flash memory is a 262 144 by
8-bit (2 097 152-bit), programmable read-only
memory that can be electrically bulk-erased and
reprogrammed. It is available in 100 000 and
10 000 program/erase-endurance-cycle versions.
The TMS28F020 is offered in a 32-lead plastic
leaded chip-carrier package using 1,25-mm
(50-mil) lead spacing (FM suffix) and a 32-lead
thin small-outline package (DD suffix).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251−1443
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
Copyright
1998, Texas Instruments Incorporated
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