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2SC3061

Description
Silicon NPN Power Transistors
File Size127KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SC3061 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-3 package
·Ultra-fast
switching
·Wide
area of safe operation
·High
breakdown voltage
APPLICATIONS
·Switching
regulators
·Motor
controls
·Ultrasonic
oscillators
·Class
C and D amplifiers
·Deflection
circuits
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
2SC3061
Fig.1 simplified outline (TO-3) and symbol
Collector
ABSOLUTE MAXIMUM RATINGS(T
C
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
PW≤25μs,Duty cycle≤50%
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1200
850
7
10
20
5
200
175
-65~175
UNIT
V
V
V
A
A
A
W
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