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BS250PM1

Description
Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size34KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BS250PM1 Overview

Small Signal Field-Effect Transistor, 0.23A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3

BS250PM1 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage45 V
Maximum drain current (ID)0.23 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
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