Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD772 2SD772A 2SD772B
DESCRIPTION
·With
TO-220C package
·High
breakdown voltage
·High
speed switching
APPLICATIONS
·For
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SD772
V
CBO
Collector-base voltage
2SD772A
2SD772B
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open base
Open collector
Open emitter
CONDITIONS
VALUE
150
200
250
80
6
5
10
40
150
-50~150
V
V
A
A
W
℃
℃
V
UNIT
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2SD772
I
CBO
Collector
cut-off current
2SD772A
2SD772B
I
EBO
h
FE
t
f
f
T
Emitter cut-off current
DC current gain
Fall time
Transition frequency
2SD772 2SD772A 2SD772B
CONDITIONS
I
C
=0.2A; L=25mH
I
C
=5A; I
B
=1A
I
C
=5A ; V
CE
=4V
V
CB
=150V; I
E
=0
V
CB
=200V; I
E
=0
V
CB
=250V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=5A ; V
CE
=4V
I
C
=5A ; V
EB
=-5V, I
B1
=0.8A
I
C
=0.5A ; V
CE
=10V
MIN
80
TYP.
MAX
UNIT
V
1.6
1.5
V
V
1.0
mA
0.1
14
1
40
mA
μs
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD772 2SD772A 2SD772B
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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