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2SD866A

Description
Silicon NPN Power Transistors
File Size66KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD866A Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD866 2SD866A
DESCRIPTION
·With
TO-220C package
·Low
collector saturation voltage
·Excellent
linearity of h
FE
·High
collector current
APPLICATIONS
·For
power switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Tc=25
)
SYMBOL
PARAMETER
2SD866
V
CBO
Collector-base voltage
2SD866A
2SD866
V
CEO
Collector-emitter voltage
2SD866A
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
100
7
7
15
40
150
-55~150
V
A
A
W
Open emitter
150
80
V
CONDITIONS
VALUE
130
V
UNIT

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2SD866A 2SD866
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