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2SD868

Description
Silicon NPN Power Transistors
File Size130KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SD868 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD868
DESCRIPTION
·With
TO-3 package
·Built-in
damper diode
·High
voltage ,high speed
·Low
collector saturation voltage
APPLICATIONS
·For
use in color TV deflection circuits
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-collector voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
2.5
1.0
50
150
-65~150
UNIT
V
V
V
A
A
W
P
T
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
2.5
UNIT
℃/W
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