INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BD649
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 100V(Min)
·High
DC Current Gain
: h
FE
= 750(Min) @I
C
= 3A
·Low
Saturation Voltage
·Complement
to Type BD650
APPLICATIONS
·Designed
for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
120
100
5
8
12
0.3
2
UNIT
V
V
V
A
A
A
P
C
W
62.5
150
-65~150
℃
℃
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
2
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BD649
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Breakdown Voltage
I
C
= 30mA; I
B
= 0
100
V
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 12mA
B
2.0
V
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 50mA
B
2.5
V
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 50mA
B
3.0
V
Base-Emitter On Voltage
I
C
= 3A ; V
CE
= 3V
2.5
V
V
CB
= 100V; I
E
= 0
I
CBO
Collector Cutoff Current
V
CB
= 60V; I
E
= 0; T
C
= 150℃
0.2
mA
2.0
I
CEO
Collector Cutoff Current
V
CE
= 50V; I
B
= 0
B
0.5
mA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
5
mA
h
FE
DC Current Gain
I
C
= 3A ; V
CE
= 3V
750
isc Website：www.iscsemi.cn
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