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KSC5027

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size86KB,4 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric View All

KSC5027 Overview

POWER TRANSISTOR

KSC5027 Parametric

Parameter NameAttribute value
stateActive
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5027
DESCRIPTION
·With
TO-220C package
·High
voltage and high reliability
·High
speed switching
·Wide
area of safe operation
·
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1100
800
7
3
10
1.5
50
150
-55~150
UNIT
V
V
V
A
A
A
W
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