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2N6111

Description
7 A, PNP, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size92KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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2N6111 Overview

7 A, PNP, Si, POWER TRANSISTOR, TO-220AB

2N6111 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current7 A
Processing package descriptionTO-220, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor30
Rated crossover frequency10 MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to NPN type:
2N6288; 2N6290 ;2N6292
APPLICATIONS
·Power amplifier and switching
circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2N6107 2N6109 2N6111
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
PARAMETER
2N6107
V
CBO
Collector-base voltage
2N6109
2N6111
2N6107
V
CEO
Collector-emitter voltage
2N6109
2N6111
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-30
-50
-70
-5
-7
-10
-3
40
150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.125
UNIT
/W

2N6111 Related Products

2N6111 2N6107 2N6109
Description 7 A, PNP, Si, POWER TRANSISTOR, TO-220AB 7 A, PNP, Si, POWER TRANSISTOR, TO-220AB 7 A, PNP, Si, POWER TRANSISTOR, TO-220AB
Number of terminals 3 3 3
Transistor polarity PNP PNP PNP
Maximum collector current 7 A 7 A 7 A
Processing package description TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE DARLINGTON DARLINGTON
Shell connection COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1
Transistor component materials SILICON SILICON SILICON
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 30 2.3 2.3
Rated crossover frequency 10 MHz 10 MHz 10 MHz
Lead-free - Yes Yes
EU RoHS regulations - Yes Yes
terminal coating - MATTE TIN MATTE TIN
Maximum ambient power consumption - 40 W 40 W
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