SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1642
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage:
V
CE(SAT)
=-1.5V(Max) at I
C
=-2.5A,I
B
=-0.25A
·Collector power dissipation:
P
C
=25W(T
C
=25 )
APPLICATIONS
·Audio frequency power amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-7
-4
-1
2.0
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-2.5A; I
B
=-0.25A
I
C
=-0.5A;V
CE
=-5V
V
CB
=-60V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
I
E
=0; f=1MHz;V
CB
=-10V
100
20
MIN
-60
2SB1642
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
-0.7
-0.75
-1.5
-1.0
-10
-10
320
V
V
µA
µA
9.0
50
MHz
pF
2
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