SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High current
·Complement to type BD136/138/140
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD135 BD137 BD139
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
BD135
V
CBO
Collector-base voltage
BD137
BD139
BD135
V
CEO
Collector-emitter voltage
BD137
BD139
V
EBO
I
C
I
CM
I
BM
P
t
T
j
T
stg
T
amb
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
T
mb
670
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
100
45
60
100
5
1.5
2
1
8
150
-65~150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
I
C
=0.5A; I
B
=50mA
I
C
=500mA ; V
CE
=2V
V
CB
=30V; I
E
=0
I
CBO
Collector cut-off current
V
CB
=30V; I
E
=0 T
j
=125
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
Emitter cut-off current
DC current gain
DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16
DC current gain
Transition frequency
V
EB
=5V; I
C
=0
I
C
=5mA ; V
CE
=2V
I
C
=150mA ; V
CE
=2V
I
C
=500mA ; V
CE
=2V
BD135 BD137 BD139
SYMBOL
V
CEsat
V
BE
MIN
TYP.
MAX
0.5
1.0
100
10
100
UNIT
V
V
nA
µA
nA
40
63
63
100
25
190
MHz
250
160
250
I
C
=50mA; V
CE
=5V ;f=100MHz
2
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