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2SC2970

Description
1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size108KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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2SC2970 Overview

1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126

2SC2970 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionTO-126, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption1.25 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor25
Rated crossover frequency190 MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High current
·Complement to type BD136/138/140
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD135 BD137 BD139
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
BD135
V
CBO
Collector-base voltage
BD137
BD139
BD135
V
CEO
Collector-emitter voltage
BD137
BD139
V
EBO
I
C
I
CM
I
BM
P
t
T
j
T
stg
T
amb
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
T
mb
670
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
100
45
60
100
5
1.5
2
1
8
150
-65~150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W

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