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BD235

Description
2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size98KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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BD235 Overview

2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

BD235 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current2 A
Maximum Collector-Emitter Voltage60 V
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption25 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor40
Rated crossover frequency3 MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type BD234 /236 /238
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD233 BD235 BD237
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
BD233
V
CBO
Collector-base voltage
BD235
BD237
BD233
V
CEO
Collector-emitter voltage
BD235
BD237
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
100
45
60
80
5
2
6
25
150
-65~150
V
A
A
W
V
V
UNIT

BD235 Related Products

BD235 BD237 BD233
Description 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 POWER TRANSISTOR POWER TRANSISTOR
state ACTIVE ACTIVE ACTIVE
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
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