SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD246/A/B/C
DESCRIPTION
·With TO-3PN package
·Complement to type BD245/A/B/C
APPLICATIONS
·For use in medium power linear
and switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
BD246
V
CBO
Collector-base voltage
BD246A
BD246B
BD246C
BD246
V
CEO
Collector-emitter voltage
BD246A
BD246B
BD246C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
CONDITIONS
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-10
-15
-3
80
-65~150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.56
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD246/A/B/C
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BD246
Collector-emitter
breakdown voltage
BD246A
I
C
=30mA ;I
B
=0
BD246B
BD246C
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
Collector
cut-off current
BD246/246A
BD246B/246C
I
C
=-3A ;I
B
=-0.3A
I
C
=-10A ;I
B
=-2.5A
I
C
=-3A ; V
CE
=-4V
I
C
=-10A ; V
CE
=-4V
V
CE
=-30V; I
B
=0
-0.7
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
I
C
=-10A ; V
CE
=-4V
40
20
4
-1
mA
mA
-80
-100
-1.0
-4.0
-1.6
-3.0
V
V
V
V
CONDITIONS
MIN
-45
-60
V
TYP.
MAX
UNIT
SYMBOL
V
CEO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Switching times
t
on
t
off
Turn-on time
Turn-off time
I
C
=-1A;
I
B1
=-I
B2
=-0.1A
R
L
=20>
0.2
0.8
µs
µs
2
Microcontroller MCU
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