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bu406

Description
7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size107KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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BU406 Overview

7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BU406 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current7 A
Maximum Collector-Emitter Voltage200 V
Processing package descriptionTO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Rated crossover frequency10 MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU406 BU407
DESCRIPTION
·With TO-220C package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
PARAMETER
BU406
Collector-base voltage
BU407
BU406
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
Collector-emitter voltage
BU407
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
150
6
7
10
4
60
150
-65~150
V
A
A
A
W
Open emitter
330
200
V
CONDITIONS
VALUE
400
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
/W

BU406 Related Products

BU406 BU407
Description 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB 7 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Number of terminals 3 3
Maximum collector current 7 A 7 A
Maximum Collector-Emitter Voltage 200 V 150 V
Processing package description TO-220, 3 PIN TO-220, 3 PIN
state ACTIVE Active
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE
terminal coating MATTE TIN TIN LEAD
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Rated crossover frequency 10 MHz 10 MHz
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