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BUT11

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size98KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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BUT11 Overview

POWER TRANSISTOR

BUT11 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUT11 BUT11A
Absolute maximum ratings (Tc=25 )
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
BUT11
BUT11A
BUT11
BUT11A
CONDITIONS
Open emitter
VALUE
850
1000
400
450
7
5
10
2
T
mb
425
100
0.8
150
-65~150
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
f
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Fall time
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
A
W
µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
1.25
UNIT
K/W

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