SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX84F BUX85F
DESCRIPTION
·With TO-220Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls systems
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolut maximum ratings (Ta=25 )
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
BUX84F
BUX85F
BUX84F
BUX85F
CONDITIONS
Open emitter
VALUE
800
1000
400
450
10
2
3
0.75
1
T
C
=25
18
150
-65~150
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to ambient
MAX
55
UNIT
K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BUX84F
I
C
=100mA ; I
B
=0;L=25mH
BUX85F
I
C
=0.3A ;I
B
=0.03A
I
C
=1A ;I
B
=0.2A
I
C
=1A ;I
B
=0.2A
V
CES
=800V; V
BE
=0
T
j
=125
V
CES
=1000V; V
BE
=0
T
j
=125
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
I
C
=0.2A ;V
CE
=10V;f=1.0MHz
CONDITIONS
BUX84F BUX85F
SYMBOL
MIN
400
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
450
0.8
1
1.1
0.2
1.5
0.2
1.5
1.0
20
15
20
MHz
100
V
V
V
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
BUX84F
I
CES
Collector cut-off current
BUX85F
mA
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1A ;V
CC
=250V
I
B1
=0.2A;I
B2
=-0.4A
0.2
2
0.4
0.5
3.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUX84F BUX85F
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3