TIP115 datasheet, PDF - EEWORLD Datasheet

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TIP115: Description2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size121KB，4 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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TIP115 Overview

2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB

TIP115 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	2 A
Maximum Collector-Emitter Voltage	60 V
Processing package description	PLASTIC, TO-220, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	2 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	500

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SavantIC Semiconductor

Product Specification

Silicon PNP Darlington Power Transistors

DESCRIPTION

·With TO-220C package

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

·Complement to type TIP110/111/112

APPLICATIONS

·For industrial use

PINNING

Base

Collector;connected to

mounting base

Emitter

DESCRIPTION

TIP115/116/117

ABSOLUTE MAXIMUM RATINGS (Tc=25 )

SYMBOL

PARAMETER

TIP115

CBO

Collector-base voltage

TIP116

TIP117

TIP115

CEO

Collector-emitter voltage

TIP116

TIP117

EBO

stg

Emitter-base voltage

Collector current-DC

Collector current-Pulse

Base current-DC

Collector power dissipation

Junction temperature

Storage temperature

=25

Open collector

Open base

Open emitter

CONDITIONS

VALUE

-60

-80

-100

-60

-80

-100

--5

-2

-4

150

-65~150

UNIT

TIP115 Related Products

	TIP115	TIP117	TIP116
Description	2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB	2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB	2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Number of terminals	3	3	3
Transistor polarity	PNP	PNP	PNP
Maximum collector current	2 A	2 A	2 A
Maximum Collector-Emitter Voltage	60 V	100 V	80 V
Processing package description	PLASTIC, TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	TIN	TIN LEAD	MATTE TIN
Terminal location	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of components	1	1	1
Transistor component materials	SILICON	SILICON	SILICON
Maximum ambient power consumption	2 W	50 W	2 W
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	500	500	500
Lead-free	Yes	-	Yes
transistor applications	SWITCHING	AMPLIFIER	-

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