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TIP116

Description
2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size121KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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TIP116 Overview

2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB

TIP116 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current2 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionTO-220, 3 PIN
Lead-freeYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption2 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor500
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type TIP110/111/112
APPLICATIONS
·For industrial use
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP115/116/117
ABSOLUTE MAXIMUM RATINGS (Tc=25 )
SYMBOL
PARAMETER
TIP115
V
CBO
Collector-base voltage
TIP116
TIP117
TIP115
V
CEO
Collector-emitter voltage
TIP116
TIP117
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current-DC
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
T
a
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-60
-80
-100
-60
-80
-100
--5
-2
-4
50
50
W
2
150
-65~150
V
A
A
mA
V
V
UNIT

TIP116 Related Products

TIP116 TIP115 TIP117
Description 2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Number of terminals 3 3 3
Transistor polarity PNP PNP PNP
Maximum collector current 2 A 2 A 2 A
Maximum Collector-Emitter Voltage 80 V 60 V 100 V
Processing package description TO-220, 3 PIN PLASTIC, TO-220, 3 PIN TO-220, 3 PIN
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
terminal coating MATTE TIN TIN TIN LEAD
Terminal location SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON
Number of components 1 1 1
Transistor component materials SILICON SILICON SILICON
Maximum ambient power consumption 2 W 2 W 50 W
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 500 500 500
Lead-free Yes Yes -
transistor applications - SWITCHING AMPLIFIER

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