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TIP34

Description
10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218
Categorysemiconductor    Discrete semiconductor   
File Size136KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric Compare View All

TIP34 Overview

10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218

TIP34 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current10 A
Maximum Collector-Emitter Voltage100 V
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption3.5 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor20
Rated crossover frequency3 MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type TIP33/33A/33B/33C
·DC current gain h
FE
=40(Min)@I
C
=1.0A
APPLICATIONS
·Designed for use in general purpose power
amplifier and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP34/34A/34B/34C
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
TIP34
V
CBO
Collector-base voltage
TIP34A
TIP34B
TIP34C
TIP34
V
CEO
Collector-emitter voltage
TIP34A
TIP34B
TIP34C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-10
-15
-3
80
150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.56
UNIT
/W

TIP34 Related Products

TIP34 TIP34B TIP34A TIP34C
Description 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218
Number of terminals 3 3 3 3
Transistor polarity PNP PNP PNP PNP
Maximum collector current 10 A 10 A 10 A 10 A
Maximum Collector-Emitter Voltage 100 V 100 V 100 V 100 V
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
terminal coating TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal location SINGLE SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maximum ambient power consumption 3.5 W 3.5 W 3.5 W 3.5 W
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 20 20 20 20
Rated crossover frequency 3 MHz 3 MHz 3 MHz 3 MHz
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