TIP34B datasheet, PDF - EEWORLD Datasheet

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TIP34B: Description10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218; Categorysemiconductor Discrete semiconductor; File Size136KB，3 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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TIP34B Overview

10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218

TIP34B Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	10 A
Maximum Collector-Emitter Voltage	100 V
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN LEAD
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	COLLECTOR
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	3.5 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	20
Rated crossover frequency	3 MHz

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SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

DESCRIPTION

·With TO-3PN package

·Complement to type TIP33/33A/33B/33C

·DC current gain h

=40(Min)@I

=1.0A

APPLICATIONS

·Designed for use in general purpose power

amplifier and switching applications.

PINNING

Base

Collector;connected to

mounting base

Emitter

DESCRIPTION

TIP34/34A/34B/34C

Fig.1 simplified outline (TO-3PN) and symbol

ABSOLUTE MAXIMUM RATINGS(Tc=25 )

SYMBOL

PARAMETER

TIP34

CBO

Collector-base voltage

TIP34A

TIP34B

TIP34C

TIP34

CEO

Collector-emitter voltage

TIP34A

TIP34B

TIP34C

EBO

stg

Emitter-base voltage

Collector current

Collector current-peak

Base current

Collector power dissipation

Junction temperature

Storage temperature

=25

Open collector

Open base

Open emitter

CONDITIONS

VALUE

-40

-60

-80

-100

-40

-60

-80

-100

-5

-10

-15

-3

150

-65~150

UNIT

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance junction to case

MAX

1.56

UNIT

TIP34B Related Products

	TIP34B	TIP34	TIP34A	TIP34C
Description	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218
Number of terminals	3	3	3	3
Transistor polarity	PNP	PNP	PNP	PNP
Maximum collector current	10 A	10 A	10 A	10 A
Maximum Collector-Emitter Voltage	100 V	100 V	100 V	100 V
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE	SINGLE	SINGLE	SINGLE
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Number of components	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maximum ambient power consumption	3.5 W	3.5 W	3.5 W	3.5 W
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	20	20	20	20
Rated crossover frequency	3 MHz	3 MHz	3 MHz	3 MHz

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