SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1296
·Wit
DESCRIPTION
h TO-3PN package
·High DC current gain
·Low saturation voltage
APPLICATIONS
·For audio frequency power amplifier
and low speed high current switching
industrial use
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
T
Total power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3.0
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
MAX
150
100
8
15
30
100
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=30mA ;I
B
=0
I
C
=15A ;I
B
=30mA
I
C
=15A ;I
B
=30mA
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=15A ; V
CE
=2V
1000
MIN
100
2SD1296
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
1.5
2.2
10
5
30000
V
V
µA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=15A; I
B1
=-I
B2
=30mA
V
CC
=60V;R
L
=4@
1.0
5.0
2.0
µs
µs
µs
h
FE
Classifications
M
1000-3000
L
2000-5000
K
4000-10000
J
8000-30000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1296
Fig.2 outline dimensions
3
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